| PART |
Description |
Maker |
| 5B41-04 5B40-02 5B40-03 5B40-04 5B40-05 5B40-06 5B |
Isolated, Wide Bandwidth Millivolt and Voltage Input SPECIALTY ANALOG CIRCUIT, XMA
Isolated Wide Bandwidth mV Input Signal Conditioning Module
Isolated Wide Bandwidth V Input Signal Conditioning Module
|
Analog Devices, Inc.
AD[Analog Devices]
|
| ADG784 ADG784BCP |
ADMC200 & ADMC201 Motion Coprocessors
CMOS 3 V/5 V Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
|
AD[Analog Devices]
|
| ADG799GBCPZ-REEL ADG799GCCPZ-REEL ADG799ACCPZ-REEL |
IC-Compatible, Wide Bandwidth, Triple 2 2 Crosspoint Switch 3-CHANNEL, CROSS POINT SWITCH, QCC24
IC-Compatible, Wide Bandwidth, Triple 2 × 2 Crosspoint Switch
|
Analog Devices, Inc.
|
| K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格（x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SJL-115 |
180o HYBRID WIDE BANDWIDTH 200 - 1200 MHz
180ì HYBRID WIDE BANDWIDTH 200 - 1200 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 3B18 3B18-02 3B18-00 3B18-01 3B18-CUSTOM 3B18-15 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module
Wide Bandwidth Strain Gage Input
From old datasheet system
|
AD[Analog Devices]
Analog Devices, Inc.
|
| C6438-02 |
WIDE BANDWIDTH AMPLIFIER UNIT
|
Hamamatsu Corporation
|
| 2450AT43H0100 |
2.45 GHz Antenna (Wide Bandwidth)
|
Johanson Technology Inc.
|
| MSK610B MSK610 |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
|
MSK[M.S. Kennedy Corporation]
|
| 86105C-300 86105D-281 86105C-170 86105D-IRC |
Wide-Bandwidth Oscilloscope Mainframe and Modules
|
Keysight Technologies
|
| LTC1968 LTC1968CMS8 LTC1968IMS8 |
Precision Wide Bandwidth, RMS-to-DC Converter
|
LINER[Linear Technology]
|
